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1. Equipment Overview:

Mainly used in 3-6 inch indium phosphide, gallium phosphide III-V compound semiconductor crystal material polycrystalline synthesis process and automatic control system.

2. Equipment parameter type:

3. Main features and advantages of the equipment

1★With powerful operation functions, windows interface, display screen operation, users can easily modify process control parameters and display various process states at any time; equipped with fault self-diagnosis software, which can greatly save maintenance time;

2★Adopt high-reliability industrial computer + PLC mode to fully automatically control furnace temperature, gas flow, valves, etc., and realize the automation of the entire process;

3★The program can realize manual/automatic operation. After power failure or mid-stop, the temperature can be manually increased according to the process when restarted, saving process time;

4★The gas flow is precisely controlled by a high-pressure valve, using analog signal closed-loop control, strong and weak electricity are separated, and the gas is opened with a slow start function;

5★With multiple alarm functions and safety protection functions;
6★The constant temperature zone is automatically adjusted to accurately control the actual process temperature of the reaction tube;