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1. Equipment Overview:

The vertical annealing furnace system is applicable to integrated circuits, discrete components, POWER, MEMS and other fields, suitable for high-temperature dry/wet oxidation, DCE oxidation, nitridation, diffusion, GPP, annealing, alloying and other processes for 6-12 inch wafer chips.

 The annealing process is carried out under medium-low temperature conditions by introducing inert gas (N2) to eliminate crystal defects and damage at the wafer interface, optimizing the quality of the wafer interface.

The system is a vertical single-chamber furnace tube with highly automated process control. It mainly includes the main unit, power cabinet, gas cabinet, heating system, transmission system and other components.

2. Equipment Parameter Types:

3. Main Features and Advantages

1★ Powerful operation functions, Windows interface, display screen operation, allowing users to conveniently modify process control parameters and display various process statuses in real time; equipped with fault self-diagnosis software, significantly reducing maintenance time;

2★ Reliable industrial computer + PLC mode for fully automatic control of furnace temperature, boat movement, gas flow, and valves, achieving complete process automation;

3★ Program supports manual/automatic operation, allowing process temperature ramp-up after power failure or shutdown, saving process time;

4★ Multiple process pipelines available for user selection;

5★ High-speed pulse closed-loop control for boat movement, avoiding motor step loss and vibration; automatic position calibration after each cycle to effectively prevent positioning deviation;

6★ Precise gas flow control with analog signal closed-loop control, strong/weak electrical separation, standard bus for data interaction to enhance anti-interference capability and ensure data safety; gas activation with soft-start function;

7★ Multiple alarm functions and safety protection features;
8★ Constant temperature zone auto-adjustment, cascade control, accurately controlling the actual process temperature of the reaction tube;